Semi-metal and semiconductor materials

Content:
80 Semi-metal and semiconductor materials - general
81 semi-metal
82 elementary semiconductors
83 compound semiconductors

H80 GB/T 14264 - 1993 半导体材料术语
Semiconductor materials - Terms and definitions
H80 GB/T 14844 - 1993 半导体材料牌号表示方法
Designations of semiconductor materials
H8l GB/T 5238 - 1985 锗单晶
Monocrystalline germanium
H8I GB/T8646 - 1998 半导体键合铝-1％硅细丝
Fine alumininm-1％silicon wire for semiconductor lend-bonding
H81 GB/T 11070 - 1989 还原锗锭
Reduced germanium ingot
H81 GB/T 11071 - 1989 区熔锗锭
Zone-refined germanium ingot
H8l GB/T 11072 - 1989 锑化铟多晶、单晶及切割片
Indium antimonide polycrystal, single crystals and as-cut slices
H81 GB/T 11093 - 1989 液封直拉法砷化镓单晶及切割片
Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slices
H81 GB/T 11094 - 1989 水平法砷化镓单晶及切割片
Boat-grown galliumarsenide single crystals and as-cut slices
H81 GB/T 14139 - 1993 硅外延片
Silicon epitaxial wafers
H81 GB/T 15713 - 1995 锗单晶片
Monocrystalline germanium slices
H82 GB/T 12962一1996 硅单晶
Monocrystalline silicon
H82 GB/T 12963 - 1996 硅多晶
Polycrystalline silicon
H82 GB/T 12964 - 2003 硅单晶抛光片
Monocrystalline silicon polished wafers
H82 GB/T 12965-1996 硅单晶切割片和研磨片
Monocrystalline silicon as-cut slices and lapped slices
H82 GB/T 16595 - 1996 晶片通用网格规范
Specification for a universal wafer grid
H82 GB/T 19199 - 2003 半绝缘砷化镓单晶中碳浓度的红外吸收测试方法
Test method for carbon concentration of semi-insulting monocrystal gallium arsenide by measurement infrared absorption method
H88 GB/T 2881 - 1991 工业硅技术条件
Technical requirements for silicon metal